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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes
Michael E. Levinshtein, Pavel A. Ivanov, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. HullVolume:
49
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2005.04.020
File:
PDF, 352 KB
english, 2005