A qualitative study of the influence of confinement...

Solid-State Electronics 2005 Vol. 49; Iss. 9

A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices

F.M. Gómez-Campos, S. Rodríguez-Bolívar, J.A. Jiménez-Tejada, J.E. Carceller
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Volume:
49
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2005.07.006
File:
PDF, 812 KB
english, 2005
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