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Static and dynamic electrical study of a-SiC:H based p–i–n structure, effect of hydrogen dilution of the intrinsic layer
M. Abdelkrim, M. Loulou, R. Gharbi, M. Fathallah, C.F. Pirri, E. TressoVolume:
51
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2006.11.015
File:
PDF, 196 KB
english, 2007