An electron injection model for time-dependent simulators...

Solid-State Electronics 2007 Vol. 51; Iss. 2

An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors

X. Oriols, E. Fernàndez-Díaz, A. Alvarez, A. Alarcón
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Volume:
51
Year:
2007
Language:
english
Pages:
14
DOI:
10.1016/j.sse.2007.01.011
File:
PDF, 508 KB
english, 2007
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