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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
M. von Haartman, B.G. Malm, P.-E. Hellström, M. Östling, T.J. Grasby, T.E. Whall, E.H.C. Parker, K. Lyutovich, M. Oehme, E. KasperVolume:
51
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2007.03.011
File:
PDF, 239 KB
english, 2007