Doping profile dependence of the vertical impact ionization...

Solid-State Electronics 2007 Vol. 51; Iss. 10

Doping profile dependence of the vertical impact ionization MOSFET’s (I-MOS) performance

Ulrich Abelein, Andreas Assmuth, Peter Iskra, Markus Schindler, Torsten Sulima, Ignaz Eisele
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Volume:
51
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2007.06.017
File:
PDF, 543 KB
english, 2007
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