VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications
Falong Zhou, Yimao Cai, Ru Huang, Yan Li, Xiaonan Shan, Jia Liu, Ao Guo, Xing Zhang, Yangyuan WangVolume:
51
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2007.09.027
File:
PDF, 536 KB
english, 2007