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Superior N- and P-MOSFET scalability using carbon...

Solid-State Electronics 2007 Vol. 51; Iss. 11-12

Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

E. Augendre, B.J. Pawlak, S. Kubicek, T. Hoffmann, T. Chiarella, C. Kerner, S. Severi, A. Falepin, J. Ramos, A. De Keersgieter, P. Eyben, D. Vanhaeren, W. Vandervorst, M. Jurczak, P. Absil, S. Biesema
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Volume:
51
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2007.09.038
File:
PDF, 906 KB
english, 2007
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