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Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
A. Veloso, H.Y. Yu, A. Lauwers, S.Z. Chang, C. Adelmann, B. Onsia, M. Demand, S. Brus, C. Vrancken, R. Singanamalla, P. Lehnen, J. Kittl, T. Kauerauf, R. Vos, B.J. O′Sullivan, S. Van Elshocht, R. MitsVolume:
52
Year:
2008
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2008.04.011
File:
PDF, 1001 KB
english, 2008