Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. IwaiVolume:
52
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2008.04.015
File:
PDF, 255 KB
english, 2008