Multi-gate devices for the 32 nm technology node...

Solid-State Electronics 2008 Vol. 52; Iss. 9

Multi-gate devices for the 32 nm technology node and beyond

N. Collaert, A. De Keersgieter, A. Dixit, I. Ferain, L.-S. Lai, D. Lenoble, A. Mercha, A. Nackaerts, B.J. Pawlak, R. Rooyackers, T. Schulz, K.T. San, N.J. Son, M.J.H. Van Dal, P. Verheyen, K. von Arni
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Volume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.04.018
File:
PDF, 949 KB
english, 2008
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