105 nm Gate length pMOSFETs with high-K and metal...

Solid-State Electronics 2008 Vol. 52; Iss. 9

105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers

C. Le Royer, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, J.-M. Hartmann, M.-C. Roure, H. Grampeix, S. Soliveres, G. Le Carval, R. Truche, A. Pouydebasque, M. Vinet, S. Deleonibus
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Volume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.04.019
File:
PDF, 522 KB
english, 2008
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