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Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
A. Pirovano, F. Pellizzer, I. Tortorelli, A. Riganó, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, A. Redaelli, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, R. BezVolume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.04.031
File:
PDF, 403 KB
english, 2008