NEMS switch with 30 nm-thick beam and...

Solid-State Electronics 2008 Vol. 52; Iss. 10

NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

Weon Wi Jang, Jun-Bo Yoon, Min-Sang Kim, Ji-Myoung Lee, Sung-Min Kim, Eun-Jung Yoon, Keun Hwi Cho, Sung-Young Lee, In-Hyuk Choi, Dong-Won Kim, Donggun Park
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Volume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.06.026
File:
PDF, 506 KB
english, 2008
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