FDSOI devices with thin BOX and ground plane integration...

Solid-State Electronics 2009 Vol. 53; Iss. 7

FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

C. Fenouillet-Beranger, S. Denorme, P. Perreau, C. Buj, O. Faynot, F. Andrieu, L. Tosti, S. Barnola, T. Salvetat, X. Garros, M. Cassé, F. Allain, N. Loubet, L. Pham-Nguyen, E. Deloffre, M. Gros-Jean,
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Volume:
53
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2009.02.009
File:
PDF, 789 KB
english, 2009
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