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New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate
Georges Guegan, R. Gwoziecki, P. Touret, C. Raynaud, J. Pretet, O. Gonnard, G. Gouget, S. DeleonibusVolume:
53
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2009.02.011
File:
PDF, 579 KB
english, 2009