A low insertion loss GaAs pHEMT switch utilizing dual...

Solid-State Electronics 2010 Vol. 54; Iss. 3

A low insertion loss GaAs pHEMT switch utilizing dual n+-doping AlAs etching stop layers design

Feng-Tso Chien, Da-Wei Lin, Chih-Wei Yang, Jeffrey S. Fu, Hsien-Chin Chiu
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Volume:
54
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2009.10.003
File:
PDF, 453 KB
english, 2010
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