Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
S. Put, H. Mehta, N. Collaert, M. Van Uffelen, P. Leroux, C. Claeys, N. Lukyanchikova, E. SimoenVolume:
54
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2009.12.016
File:
PDF, 1.10 MB
english, 2010