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Effects of switching from 〈1 1 0〉 to 〈1 0 0〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors
Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. ChanVolume:
54
Year:
2010
Language:
english
Pages:
14
DOI:
10.1016/j.sse.2009.12.031
File:
PDF, 1004 KB
english, 2010