Measurements of charge carrier mobilities and drift...

Solid-State Electronics 2011 Vol. 56; Iss. 1

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of 〈1 1 1〉 and 〈1 0 0〉 crystal orientation at high electric fields

Julian Becker, Eckhart Fretwurst, Robert Klanner
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Volume:
56
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2010.10.009
File:
PDF, 1.23 MB
english, 2011
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