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Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
V. Jousseaume, A. Fantini, J.F. Nodin, C. Guedj, A. Persico, J. Buckley, S. Tirano, P. Lorenzi, R. Vignon, H. Feldis, S. Minoret, H. Grampeix, A. Roule, S. Favier, E. Martinez, P. Calka, N. Rochat, G.Volume:
58
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2010.11.023
File:
PDF, 1.28 MB
english, 2011