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Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D.J. WoutersVolume:
58
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2010.11.031
File:
PDF, 1.03 MB
english, 2011