Physics of Gate Modulated Resonant Tunneling (RT)-FETs:...

Solid-State Electronics 2011 Vol. 59; Iss. 1

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

Aryan Afzalian, Jean-Pierre Colinge, Denis Flandre
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
59
Year:
2011
Language:
english
Pages:
12
DOI:
10.1016/j.sse.2011.01.016
File:
PDF, 885 KB
english, 2011
Conversion to is in progress
Conversion to is failed