Improved characteristics for Pd nanocrystal memory with...

Solid-State Electronics 2011 Vol. 61; Iss. 1

Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer

Tsung-Kuei Kang, Han-Wen Liu, Fang-Hsing Wang, Cheng-Li Lin, Ta-Chuan Liao, Wen-Fa Wu
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Volume:
61
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.02.003
File:
PDF, 970 KB
english, 2011
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