Observation and characterization of near-interface oxide...

Solid-State Electronics 2011 Vol. 63; Iss. 1

Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I–V method

A. Constant, P. Godignon
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Volume:
63
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.04.015
File:
PDF, 1.65 MB
english, 2011
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