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Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress
S.W. Taso, T.C. Chang, M.C. Wang, S.C. Chen, J. Lu, C.F. Weng, Y.F. Wei, W.C. Wu, Y. ShiVolume:
63
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.05.003
File:
PDF, 653 KB
english, 2011