A continuous semi-empiric transfer characteristics model...

Solid-State Electronics 2011 Vol. 63; Iss. 1

A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

F.J. García-Sánchez, A.D. Latorre-Rey, W. Liu, W.-C. Chen, H.-C. Lin, J.J. Liou, J. Muci, A. Ortiz-Conde
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Volume:
63
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.05.004
File:
PDF, 613 KB
english, 2011
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