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Characterization of V-shaped Defects in 4H-SiC...

Journal of Electronic Materials 2015 / 5 Vol. 44; Iss. 5

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Wu, Fangzhen, Wang, Huanhuan, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Zhang, Jie, Thomas, Bernd, Sanchez, Edward K., Mueller, Stephan G., Hansen, Darren, Loboda, Mark J., Zhang, Lihua, Su
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Volume:
44
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3536-0
Date:
May, 2015
File:
PDF, 1.93 MB
english, 2015
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