Interface reactions at TiN/HfSiON gate stacks: Dependence...

Science and Technology of Advanced Materials 2007 Vol. 8; Iss. 3

Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

Shiniti Yoshida, Yasumasa Watanabe, Yuuki Kita, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Keisaku Yamada
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
8
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.stam.2006.12.007
File:
PDF, 579 KB
english, 2007
Conversion to is in progress
Conversion to is failed