Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method
Orlov, L. K., Vdovin, V. I., Ivina, N. L., Shteinman, E‘. A., Orlov, M. L., Drozdov, Yu. N., Petrova, V. F.Volume:
55
Language:
english
Journal:
Journal of Structural Chemistry
DOI:
10.1134/S0022476614060298
Date:
November, 2014
File:
PDF, 2.65 MB
english, 2014