Specific features of the hydride vapor-phase epitaxy of...

Semiconductors 2014 / 11 Vol. 48; Iss. 11

Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate

Mynbaeva, M. G., Golovatenko, A. A., Pechnikov, A. I., Lavrent’ev, A. A., Mynbaev, K. D., Nikolaev, V. I.
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Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614110189
Date:
November, 2014
File:
PDF, 1.30 MB
english, 2014
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