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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2produced by thermal oxidation in dry oxygen
Mikhaylov, A. I., Afanasiev, A. V., Ilyin, V. A., Luchinin, V. V., Reshanov, S. A., Krieger, M., Schöner, A., Sledziewski, T.Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614120148
Date:
December, 2014
File:
PDF, 182 KB
english, 2014