Optical and electrical properties of GaN: Si-based...

Physics of the Solid State 2015 / 4 Vol. 57; Iss. 4

Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

Agekyan, V. F., Borisov, E. V., Vorobjev, L. E., Melentyev, G. A., Nykänen, H., Riuttanen, L., Serov, A. Yu., Suihkonen, S., Svensk, O., Filisofov, N. G., Shalygin, V. A., Shelukhin, L. A.
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Volume:
57
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/S1063783415040046
Date:
April, 2015
File:
PDF, 426 KB
english, 2015
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