High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
Stanchu, Hryhorii, Kladko, Vasyl, Kuchuk, Andrian V, Safriuk, Nadiia, Belyaev, Alexander, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Zytkiewicz, Zbigniew RVolume:
10
Year:
2015
Language:
english
Journal:
Nanoscale Research Letters
DOI:
10.1186/s11671-015-0766-x
File:
PDF, 1.17 MB
english, 2015