“Recovery” Effect of Electron Induced Damage in 4H-SiC...

MRS Proceedings 2003 / 1 Vol. 792

“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

Castaldini, A., Cavallini, A., Rigutti, L., Nava, F., Fuochi, P.G., Vanni, P.
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Volume:
792
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-792-R10.6
Date:
January, 2003
File:
PDF, 75 KB
english, 2003
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