Influence of Shockley Stacking Fault Expansion and...

MRS Proceedings 2008 / 1 Vol. 1069

Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes

Caldwell, Joshua David, Stahlbush, Robert E, Imhoff, Eugene A., Glembocki, Orest J., Hobart, Karl D., Tadjer, Marko J., Zhang, Qingchun, Das, Mrinal, Agarwal, Anant
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Volume:
1069
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1069-D10-04
Date:
January, 2008
File:
PDF, 296 KB
english, 2008
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