Preamorphization-induced defects in shallow P+N junctions...

Preamorphization-induced defects in shallow P+N junctions characterized by an ac magnetic field

Abdelaoui, M., Mehor, H., Idrissi, M., Benzohra, M., Olivié, F.
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Volume:
792
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-792-R9.31
Date:
January, 2003
File:
PDF, 275 KB
english, 2003
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