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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J.Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4916727
Date:
April, 2015
File:
PDF, 715 KB
english, 2015