Raman Scattering Analysis of Defects in 6H-SiC Induced by...

Materials Science Forum 1997 Vol. 258-263

Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation

Pérez-Rodríguez, A., González-Varona, O., Calvo-Barrio, L., Morante, J.R., Wirth, H., Panknin, D., Skorupa, Wolfgang
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Volume:
258-263
Year:
1997
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.258-263.727
File:
PDF, 394 KB
1997
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