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Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal–Oxide–Semiconductor Field Effect Transistors
Han, Ru, Li, CongVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.024302
Date:
February, 2013
File:
PDF, 865 KB
english, 2013