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Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
Y.L. Cheng, Y.L. Wang, G.J. Hwang, M.L. O'Neill, E.J. Karwacki, P.T. Liu, C.F. ChenVolume:
200
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.surfcoat.2005.07.015
File:
PDF, 305 KB
english, 2006