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Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
H. Pedersen, S. Leone, A. Henry, V. Darakchieva, E. JanzénVolume:
201
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.surfcoat.2007.03.052
File:
PDF, 740 KB
english, 2007