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Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy
Chevtchenko, Serguei, Reshchikov, M A, Zhu, K, Moon, Y-T, Baski, A A, Morkoç, HVolume:
892
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0892-FF23-09
Date:
January, 2005
File:
PDF, 196 KB
english, 2005