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Reduction of oxide leakage currents of EEPROM at STI corners using sacrificial oxide/liner SiN/LPCVD MTO
M.S. Kim, Y. Roh, C.S. Park, I.S. Cho, I.H. Jeoun, E.Y. Ahn, B.H. Kim, K.J. Kim, S.K. Nam, H.S. Park, D.W. Nam, C.Y. Baek, W.H. Park, B.H. Kim, S.W. Park, M.S. KimVolume:
202
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.surfcoat.2008.06.046
File:
PDF, 938 KB
english, 2008