Influence of the gas mixture on the reactive ion etching of...

Influence of the gas mixture on the reactive ion etching of InP in CH[sub 4]-H[sub 2] plasmas

Feurprier, Y.
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Volume:
15
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.589363
Date:
September, 1997
File:
PDF, 565 KB
english, 1997
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