Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy
Nishikawa, Atsushi, Furukawa, Naoki, Lee, Dong-gun, Kawabata, Kosuke, Matsuno, Takanori, Terai, Yoshikazu, Fujiwara, YasufumiVolume:
1342
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2011.994
Date:
January, 2011
File:
PDF, 291 KB
english, 2011