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Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Tokuda, YutakaVolume:
218-220
Year:
2003
Language:
english
Journal:
Defect and Diffusion Forum
DOI:
10.4028/www.scientific.net/DDF.218-220.1
File:
PDF, 1.01 MB
english, 2003