Comment on “Electronic structure of the high-temperature...

Comment on “Electronic structure of the high-temperature Ge(0 0 1) surface studied by valence band photo-emission” [Surface Science 537 (2003) L423–L428]

Bene Poelsema, Esther van Vroonhoven, Harold J.W. Zandvliet
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Volume:
547
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/j.susc.2003.10.034
File:
PDF, 243 KB
english, 2003
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