Alternative method of interface traps passivation by...

Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf
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Volume:
1693
Year:
2014
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2014.619
File:
PDF, 1.73 MB
english, 2014
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