![](/img/cover-not-exists.png)
Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, AdolfVolume:
1693
Year:
2014
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2014.619
File:
PDF, 1.73 MB
english, 2014