Simulation and Fabrication of High-Voltage 4H-SiC Diodes...

Materials Science Forum 2000 Vol. 338-342

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination

Sheridan, David C., Niu, G., Merrett, J. Neil, Cressler, J.D., Ellis, C., Tin, Chin Che, Siergiej, R.R.
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1339
File:
PDF, 369 KB
english, 2000
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